G825 Premium 25W Super SI Fast Smart Charging Head supports PD 3.0 technology. The headset with USB-C output provides power transfer to your devices in a short time.


Super GAN Charging Technology

Gan; Gallium Nitride is a semiconductor material used to convert energy into power in various electronics.

Gallium nitrate, which has a much higher energy band gap compared to the silicon used in today's charging technologies, carries a much higher voltage and allows direct current to pass faster and more efficiently.

The GaN material used by the GaN charger is a type of compound semiconductor with a wide band gap of 3.4 eV (WBG). The silicon semiconductor material found in a regular battery charger has a bandgap of only 1.12 eV, compared to GaN's 3.4 eV. Therefore, GaN battery chargers can sustain much higher voltage and much higher power density than silicon-based ones.

What is Super Si?

Besides high efficiency, Super Si includes nine circuit protections to keep both your devices and the charger safe. Super SI is a new silicon-based material with the advantages of density, thermal conductivity and efficiency conversion, internally to protect your devices against overcurrent, overcharging, overheating and short circuit.



Technicial Specifications

USB-C Input

AC100-240V 50/60Hz

USB-C Output

(PDO) 5V-3A / 9V-2.77A
(PPS) 3.3-5.9V-3A / 3.3-11V-2.25A

Output Connector

USB-C 25W max

Technology

PD 3.0 + PD 2.0 + PPS


Product features

• Overcharge Protection
• Overpower Protection
• Overcurrent Protection
• Surge Protection
• Short Circuit Protection


Box contents

• G825 Premium 25W Super SI Fast Smart Charging Head


Compatibility

• For smartphones, tablets and more